GaN Hybrid Pallet Amplifiers

GaN C- to X-band Hybrid Pallet Amplifiers

MEC has successfully designed GaN-based Hybrid Pallet Amplifiers for different customers.

Their characteristics are:

GaN Power Bars (can be chosen from different vendors) + high frequency ceramic substrates in thin film process for matching and power dividing/combining
Pre-matching or Full-matching (to the system reference impedance)
DC to RF decoupling
Compact dimension
Easy integration in SSPA schemes
Low Cost
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Typical achievable performance depends on desired:

Centre Frequency
Output Power and Drain Efficiency
Dimension
Chosen GaN Power Bar Technology

C-Band	Min		Max	Unit
Centre Frequency	4		7	GHz
Relative Bandwidth	8		12	%
Output Power (*)	60/80	110/130	200/220	W
Number of Power Bars	1	2	4
Drain Efficiency (*)	55	50	45	%
Dimension (*)	150	600	1600	mm2

(*) at midband - Pout and DE considered in pulsed condition

X-Band	Min		Max	Unit
Centre Frequency	8		10	GHz
Relative Bandwidth	8		12	%
Output Power (*)	50/80	90/120	170/200	W
Number of Power Bars	1	2	4
Drain Efficiency (*)	50	45	40	%
Dimension (*)	100	400	1100	mm2

(*) at midband - Pout and DE considered in pulsed condition

Contact us if you need more details.

By Luca CarianiPublished On: 9 November 2017Comments Off